A multi-color quantum well photodetector for mid- and long-wavelength infrared detection
Identifieur interne : 003498 ( Main/Repository ); précédent : 003497; suivant : 003499A multi-color quantum well photodetector for mid- and long-wavelength infrared detection
Auteurs : RBID : Pascal:12-0066495Descripteurs français
- Pascal (Inist)
- Coefficient absorption, Photodétecteur, Discontinuité bande, Masse effective, Accommodation réseau, Composition chimique, Hamiltonien, Haute performance, Détecteur IR, Gallium Indium Arsénioantimoniure Mixte, Aluminium Gallium Arsénioantimoniure Mixte, Densité courant, Puits quantique, Antimoniure de gallium, Hétérostructure.
English descriptors
- KwdEn :
- Absorption coefficients, Aluminium Gallium Antimonides arsenides Mixed, Band offset, Chemical composition, Current density, Effective mass, Gallium Indium Antimonides arsenides Mixed, Gallium antimonides, Hamiltonians, Heterostructures, High performance, Infrared detectors, Mismatch lattice, Photodetectors, Quantum wells.
Abstract
The authors report a two-color quantum well infrared photodetector at room temperature operating in the mid- and long-wavelength infrared detection. To this purpose, the band alignment is tailored and electronic properties are investigated for the proposed structure based on Ga1-xInxAsySb1-y/GaSb and AlxGa1-xAsySb1-y/GaSb. As accurate knowledge of band offsets is required in device modeling, we have proceeded to theoretical investigations of the band offsets for pseudo-morphically strained and lattice-matched Ga1-xInxAsySb1-y/GaSb and AlxGa1-xAsySb1-y/GaSb heterointerfaces in the whole range of alloy compositions 0 ≤ x, y ≤ 1. The carrier effective masses are deduced from the laws extracted from the k.p strain Hamiltonian laws. For the modeled heterostructure, the dark current of about 10-1 A cm-2 at ambient temperature shows the high performance of this multi-color infrared photodetector around 5 and 12.5 μm wavelengths.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">A multi-color quantum well photodetector for mid- and long-wavelength infrared detection</title><author><name sortKey="Jdidi, A" uniqKey="Jdidi A">A. Jdidi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Unité de Recherche de Physique des Solides, Département de Physique, Faculte des Sciences de Monastir</s1><s2>5019 Monastir</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>5019 Monastir</wicri:noRegion></affiliation></author><author><name sortKey="Sfina, N" uniqKey="Sfina N">N. Sfina</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Unité de Recherche de Physique des Solides, Département de Physique, Faculte des Sciences de Monastir</s1><s2>5019 Monastir</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>5019 Monastir</wicri:noRegion></affiliation></author><author><name sortKey="Abdi Ben Nassrallah, S" uniqKey="Abdi Ben Nassrallah S">S. Abdi-Ben Nassrallah</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Unité de Recherche de Physique des Solides, Département de Physique, Faculte des Sciences de Monastir</s1><s2>5019 Monastir</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>5019 Monastir</wicri:noRegion></affiliation></author><author><name sortKey="Said, M" uniqKey="Said M">M. Saïd</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Unité de Recherche de Physique des Solides, Département de Physique, Faculte des Sciences de Monastir</s1><s2>5019 Monastir</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>5019 Monastir</wicri:noRegion></affiliation></author><author><name sortKey="Lazzari, J L" uniqKey="Lazzari J">J. L. Lazzari</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), UPR-CNRS 3118 associée à Aix-Marseille Université, Case 913, Campus de Luminy</s1><s2>13288 Marseille</s2><s3>FRA</s3><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Marseille</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0066495</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 12-0066495 INIST</idno><idno type="RBID">Pascal:12-0066495</idno><idno type="wicri:Area/Main/Corpus">002301</idno><idno type="wicri:Area/Main/Repository">003498</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term><term>Aluminium Gallium Antimonides arsenides Mixed</term><term>Band offset</term><term>Chemical composition</term><term>Current density</term><term>Effective mass</term><term>Gallium Indium Antimonides arsenides Mixed</term><term>Gallium antimonides</term><term>Hamiltonians</term><term>Heterostructures</term><term>High performance</term><term>Infrared detectors</term><term>Mismatch lattice</term><term>Photodetectors</term><term>Quantum wells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Coefficient absorption</term><term>Photodétecteur</term><term>Discontinuité bande</term><term>Masse effective</term><term>Accommodation réseau</term><term>Composition chimique</term><term>Hamiltonien</term><term>Haute performance</term><term>Détecteur IR</term><term>Gallium Indium Arsénioantimoniure Mixte</term><term>Aluminium Gallium Arsénioantimoniure Mixte</term><term>Densité courant</term><term>Puits quantique</term><term>Antimoniure de gallium</term><term>Hétérostructure</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The authors report a two-color quantum well infrared photodetector at room temperature operating in the mid- and long-wavelength infrared detection. To this purpose, the band alignment is tailored and electronic properties are investigated for the proposed structure based on Ga<sub>1-x</sub>In<sub>x</sub>As<sub>y</sub>Sb<sub>1-y</sub>/GaSb and Al<sub>x</sub>Ga<sub>1-x</sub>As<sub>y</sub>Sb<sub>1-y</sub>/GaSb. As accurate knowledge of band offsets is required in device modeling, we have proceeded to theoretical investigations of the band offsets for pseudo-morphically strained and lattice-matched Ga<sub>1-x</sub>In<sub>x</sub>As<sub>y</sub>Sb<sub>1-y</sub>/GaSb and Al<sub>x</sub>Ga<sub>1-x</sub>As<sub>y</sub>Sb<sub>1-y</sub>/GaSb heterointerfaces in the whole range of alloy compositions 0 ≤ x, y ≤ 1. The carrier effective masses are deduced from the laws extracted from the k.p strain Hamiltonian laws. For the modeled heterostructure, the dark current of about 10<sup>-1</sup> A cm<sup>-2 </sup>at ambient temperature shows the high performance of this multi-color infrared photodetector around 5 and 12.5 μm wavelengths.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>26</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>A multi-color quantum well photodetector for mid- and long-wavelength infrared detection</s1></fA08><fA11 i1="01" i2="1"><s1>JDIDI (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>SFINA (N.)</s1></fA11><fA11 i1="03" i2="1"><s1>ABDI-BEN NASSRALLAH (S.)</s1></fA11><fA11 i1="04" i2="1"><s1>SAÏD (M.)</s1></fA11><fA11 i1="05" i2="1"><s1>LAZZARI (J. L.)</s1></fA11><fA14 i1="01"><s1>Unité de Recherche de Physique des Solides, Département de Physique, Faculte des Sciences de Monastir</s1><s2>5019 Monastir</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), UPR-CNRS 3118 associée à Aix-Marseille Université, Case 913, Campus de Luminy</s1><s2>13288 Marseille</s2><s3>FRA</s3><sZ>5 aut.</sZ></fA14><fA20><s2>125019.1-125019.10</s2></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21041</s2><s5>354000508823730190</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>53 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0066495</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The authors report a two-color quantum well infrared photodetector at room temperature operating in the mid- and long-wavelength infrared detection. To this purpose, the band alignment is tailored and electronic properties are investigated for the proposed structure based on Ga<sub>1-x</sub>In<sub>x</sub>As<sub>y</sub>Sb<sub>1-y</sub>/GaSb and Al<sub>x</sub>Ga<sub>1-x</sub>As<sub>y</sub>Sb<sub>1-y</sub>/GaSb. As accurate knowledge of band offsets is required in device modeling, we have proceeded to theoretical investigations of the band offsets for pseudo-morphically strained and lattice-matched Ga<sub>1-x</sub>In<sub>x</sub>As<sub>y</sub>Sb<sub>1-y</sub>/GaSb and Al<sub>x</sub>Ga<sub>1-x</sub>As<sub>y</sub>Sb<sub>1-y</sub>/GaSb heterointerfaces in the whole range of alloy compositions 0 ≤ x, y ≤ 1. The carrier effective masses are deduced from the laws extracted from the k.p strain Hamiltonian laws. For the modeled heterostructure, the dark current of about 10<sup>-1</sup> A cm<sup>-2 </sup>at ambient temperature shows the high performance of this multi-color infrared photodetector around 5 and 12.5 μm wavelengths.</s0></fC01><fC02 i1="01" i2="3"><s0>001B00G57K</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Coefficient absorption</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Absorption coefficients</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Photodétecteur</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Photodetectors</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Discontinuité bande</s0><s5>05</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Band offset</s0><s5>05</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Discontinuidad banda</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Masse effective</s0><s5>06</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Effective mass</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Accommodation réseau</s0><s5>07</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Mismatch lattice</s0><s5>07</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Acomodación red</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Composition chimique</s0><s5>08</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Chemical composition</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Hamiltonien</s0><s5>09</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Hamiltonians</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Haute performance</s0><s5>10</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>High performance</s0><s5>10</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Alto rendimiento</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Détecteur IR</s0><s5>11</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Infrared detectors</s0><s5>11</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Gallium Indium Arsénioantimoniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Gallium Indium Antimonides arsenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Antimoniuro arseniuro Mixto</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Aluminium Gallium Arsénioantimoniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>13</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Aluminium Gallium Antimonides arsenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>13</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Antimoniuro arseniuro Mixto</s0><s2>NC</s2><s2>NA</s2><s5>13</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Densité courant</s0><s5>14</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Current density</s0><s5>14</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Puits quantique</s0><s5>15</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Quantum wells</s0><s5>15</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Antimoniure de gallium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Gallium antimonides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>17</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Heterostructures</s0><s5>17</s5></fC03><fN21><s1>044</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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